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Microsemi Announces Next Generation NPT Technology For High Switching Frequency Applications

2007/9/17 9:05:11   電源在線網(wǎng)
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    Microsemi Corporation has announced a new series of high speed IGBT transistors developed for welding, low to mid-power solar inverters, uninterruptible power supplies and industrial switch mode power supply applications.

    Designated the Thunderbolt HS™ IGBT Series, the new IGBTs are Microsemi’s next generation of NPT technology targeting high switching frequency applications. These devices exhibit higher saturation voltage and significantly lower turn-off energy losses than previous generations. Low switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET performance but at lower cost.  Thunderbolt HS™ IGBTs are available as single devices or packaged with a DQ Series fast, soft recovery diode.

Key Features
• High speed switching with reduced E(off) loss
• Newest generation of NPT technology
• Tight parameter distribution and easy paralleling
• 10 micro second short circuit rating
• Available with DQ Series Combi diode
• Low EMI
• High noise immunity
• High reliability

An extremely tight parameter distribution combined with a positive temperature coefficient make it easy to parallel Thunderbolt HS™ IGBTs.  Controlled slew rates result in high noise and oscillation immunity and low EMI. The short circuit duration rating of 10 microseconds makes these IGBTs suitable for inverter and motor drive applications. Reliability is further enhanced by avalanche energy ruggedness.

The exceptional fast recovery performance of the anti-parallel DQ diode in Combi versions make the Thunderbolt HS™ series well suited for hard switching applications.  The Combi diode performance combined with fast turn-off of the IGBT combine to yield superior reliability in ZVS applications.  The Thunderbolt HS™ Series is an ideal solution for medium to high power applications requiring minimum system cost and high performance.

Rated at 600 volts and 2.8 volts typical V(CE(ON) the new high speed IGBTs are available in 20 amp, 30 amp, and 50 amp versions in TO-220, TO-247, or D(3) packages. Combi versions include a DQ series fast recovery anti-parallel diode.

The single IGBT Thunderbolt devices: 20 amp--APT20GS60KRG; 30 amp--APT30GS60KRG; 50 amp--APT50GS60BRG.

Combi IGBT Thunderbolt and DQ fast recovery diode devices: 20 amp--APT20GS60BRDQ1G;
30 amp--APT30GS60BRDQ2G; 50 amp--APT50GS60BRDQ2G.

Thunderbolt and Combi samples are available immediately. Prices range from $1.43 to $3.18 for single IGBTs in quantities of 1K pieces, and from $2.18 to $3.85 for combi’s with DQ diodes.

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編輯:Ronvy
本文鏈接:Microsemi Announces
http:leisuda.cn/news/2007-9/20079179511.html
文章標(biāo)簽: Microsemi/IGBT/HS
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