適于雙向和中頻應(yīng)用的3.3kV 高速IGBT 模塊
作者：呂佩壕 胡冬青 上傳時(shí)間：2013/4/10 20:13:43
摘要：研發(fā)了3.3kV 高速IGBT 模塊。優(yōu)化壽命控制極大地降低了關(guān)斷損耗和恢復(fù)損耗。該高速特性適用于雙向和中頻應(yīng)用，
例如諧振DC/DC 轉(zhuǎn)換器，展示了諧振DC/DC 轉(zhuǎn)換器模擬電路中IGBT 的開關(guān)行為和二極管的反向恢復(fù)行為。顯然，這種新設(shè)
計(jì)的模塊具有比傳統(tǒng)高速模塊更低的損耗，因此，更適合于雙向和中頻應(yīng)用。該設(shè)計(jì)概念也可用于6.5kV IGBT 模塊設(shè)計(jì)。另外，對(duì)諧振DC/DC 轉(zhuǎn)換器模擬電路，將新設(shè)計(jì)模塊中二極管的損耗與3kV-SiC-JBS 損耗做了比較。 敘詞：高速IGBT，模塊，雙向，中頻 DC/DC轉(zhuǎn)換器，損耗 Abstract：3.3kV high-speed IGBT module is developed. Optimized duration control has significantly reduced the shuf-off loss and rerunloss. The high-speed feature is applicable to two-way and intermediate applications, such as harmonic oscillatio DC/DC convertor. Theswitching perforamance of IGBT and backward recovery performance of diode in harmonic oscillatio DC/DC convertor simulation circuitis demonstrated. It is obvious that the newly-designed module enjoys less power loss compared with the traditional high-speed module,which means it is more applicable for two-way and intemediate frequency application. The design concept can also be applied to thedesign of 6.5kV IGBT module. On the other hand, as for harmonic oscillatio convertor simulation circuit, the diode loss of newly-designedmodule and the 3kV-SiC-JBS loss are compared. Keyword：High-speed IGBT Module, Two Way, Intermediate Frequency, DC/DC Convertor, Loss
例如諧振DC/DC 轉(zhuǎn)換器，展示了諧振DC/DC 轉(zhuǎn)換器模擬電路中IGBT 的開關(guān)行為和二極管的反向恢復(fù)行為。顯然，這種新設(shè)
計(jì)的模塊具有比傳統(tǒng)高速模塊更低的損耗，因此，更適合于雙向和中頻應(yīng)用。該設(shè)計(jì)概念也可用于6.5kV IGBT 模塊設(shè)計(jì)。另外，對(duì)諧振DC/DC 轉(zhuǎn)換器模擬電路，將新設(shè)計(jì)模塊中二極管的損耗與3kV-SiC-JBS 損耗做了比較。 敘詞：高速IGBT，模塊，雙向，中頻 DC/DC轉(zhuǎn)換器，損耗 Abstract：3.3kV high-speed IGBT module is developed. Optimized duration control has significantly reduced the shuf-off loss and rerunloss. The high-speed feature is applicable to two-way and intermediate applications, such as harmonic oscillatio DC/DC convertor. Theswitching perforamance of IGBT and backward recovery performance of diode in harmonic oscillatio DC/DC convertor simulation circuitis demonstrated. It is obvious that the newly-designed module enjoys less power loss compared with the traditional high-speed module,which means it is more applicable for two-way and intemediate frequency application. The design concept can also be applied to thedesign of 6.5kV IGBT module. On the other hand, as for harmonic oscillatio convertor simulation circuit, the diode loss of newly-designedmodule and the 3kV-SiC-JBS loss are compared. Keyword：High-speed IGBT Module, Two Way, Intermediate Frequency, DC/DC Convertor, Loss
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